Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
Patent
1997-11-17
2000-10-31
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Reverse-biased pn junction guard region
257495, 257500, H01L 29732
Patent
active
061406902
ABSTRACT:
Two bipolar transistors formed on a common semiconductor substrate are separated by a separation band. The separation band includes a first separation portion having the same conductivity type, and substantially the same impurity concentration and diffusion depth as those of each of base regions of the bipolar transistors, and second separation portions, formed on both sides of the first separation portion, which have the same conductivity type and substantially the same impurity concentration and diffusion depth as those of each of emitter regions. The second separation portions are formed so as to be shallower than the first separation portion. The second separation portions are formed across the first separation portion in a deeper portion of the substrate and a collector region. The second separation portions enclose the respective transistors, and the first separation portion separates the transistors from each other. Accordingly, a semiconductor device in which a plurality of semiconductor devices having substantially identical output characteristics and thermal characteristics are provided on a common semiconductor device and a signal of one semiconductor device is not affected by a signal of the other semiconductor device is provided.
REFERENCES:
patent: 5162252 (1992-11-01), Kanda et al.
Higashiyama Katsuhiko
Oka Itsuzo
Oohama Taizo
Hardy David
Matsushita Electric - Industrial Co., Ltd.
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