Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
Reexamination Certificate
2011-08-16
2011-08-16
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Reverse-biased pn junction guard region
C257S496000
Reexamination Certificate
active
07999347
ABSTRACT:
A semiconductor layer of a vertical diode is divided into a center region and a surrounding region. An anode electrode contacts a surface of the center region in the semiconductor layer. An insulation layer contacts a surface of the surrounding region in the semiconductor layer. Ring-shaped FLR regions are formed in the surface of the surrounding region in the semiconductor layer. The innermost FLR region extends from an inside to an outside of a boundary between the anode electrode and the insulation layer, and extends along the boundary. A shoulder portion is formed in the surface of the semiconductor layer in a manner such that a portion that contacts the insulation layer is higher than a portion that contacts the anode electrode. Flows of holes directed toward the anode electrode pass through a plurality of positions in the shoulder portion.
REFERENCES:
patent: 3742317 (1973-06-01), Shao
patent: 4862229 (1989-08-01), Mundy et al.
patent: 196 53 457 (1999-03-01), None
patent: 0 182 088 (1986-05-01), None
patent: 05-275719 (1993-10-01), None
patent: 06-029557 (1994-02-01), None
patent: 09-232597 (1997-09-01), None
patent: 2000-114550 (2000-04-01), None
patent: 2000-312013 (2000-11-01), None
patent: 2000-340806 (2000-12-01), None
patent: 2002-270857 (2002-09-01), None
patent: 2002-368231 (2002-12-01), None
patent: 2003-249663 (2003-09-01), None
patent: 2007-042836 (2007-02-01), None
Office Action issued May 17, 2011 in JP 2008-138424 & partial English translation thereof.
Kenyon & Kenyon LLP
Prenty Mark
Toyota Jidosha & Kabushiki Kaisha
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2782528