Semiconductor device having an improved breakdown voltage-raisin

Details Semiconductor device having an improved breakdown voltage-raisin Semiconductor device having an improved breakdown voltage-raisin

1993-07-20

1994-06-28

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Reverse-biased pn junction guard region

257271, 257285, 257367, 257409, 257492, 257493, 257495, H01L 2934, H01L 2980, H01L 2701

Patent

active

053249780

ABSTRACT:
It is usual in high-voltage integrated circuits to provide one or several breakdown-voltage-raising rings at the edge of a high-voltage island in the form of surface zones of the conductivity type opposite to that of the island. According to the invention, the function of these rings is locally taken over by one or several zones forming part of a circuit element and also provided with a breakdown-voltage-raising edge. Since the breakdown-voltage-raising zones are locally omitted alongside the island insulation, a major space saving can be achieved.

REFERENCES:
patent: 4573066 (1986-02-01), Whight
patent: 4750028 (1988-07-01), Ludikhuize
patent: 4774560 (1988-09-01), Coe
patent: 5083176 (1992-01-01), Slaher
patent: 5223919 (1993-06-01), Whight et al.

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