Search
Selected: G

GaAs MOSFET having low capacitance and on-resistance and...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gate electrodes and matrix lines made of W/Ta alloy for LCD appa

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gate insulated field effect transistor and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gate insulated field effect transistors and method of manufactur

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gate insulated field effect transistors and method of manufactur

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gate insulated field effect transistors and method of manufactur

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gate insulated field effect transistors and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gate insulated semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gate shorted to body thin film transistor, manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

GE-SI SOI MOS transistor and method of fabricating same

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group III-V amorphous and microcrystalline optical semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Growth of planar reduced dislocation density M-plane gallium...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Growth of reduced dislocation density non-polar gallium nitride

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0
  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.