Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-03-27
1999-06-29
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 72, 257 53, 257771, 257763, 257764, H01L 2144
Patent
active
059171987
ABSTRACT:
A conductive material comprises a tungsten and tantalum alloy including approximately 1 to 5 atm percent of tantalum.
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M. Ikeda, "TFT-LCD Gate and Data Bus-Line Design and Process Technologies," SID 95 Digest, pp. 11-14.
Abraham Fetsum
NEC Corporation
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