Group III-V amorphous and microcrystalline optical semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257103, 257615, H01L 2904

Patent

active

059862858

ABSTRACT:
The present invention provides an amorphous optical semiconductor characterized by having a ratio of the sum total number of atoms of group III elements to the number of nitrogen atoms, in the range of 1:0.5 to 1:2 while including a hydrogen. Preferable is the amorphous optical semiconductor comprising: hydrogen in the range of not less than 1 atomic % to not more than 50 atomic %; at least one selected from the group consisting of Al, Ga and In; oxygen and carbon each of not more than 15 atomic %; and nitrogen. In addition, the present invention provides a microcrystalline compound comprising: a microcrystallire compound containing hydrogen in the range of not less than 0.5 atomic % to not more than 40 atomic %; Ga; and nitrogen in the structure thereof. Moreover, the present invention provides an optical semiconductor element using these optical semiconductors as a photoconductive subtance.

REFERENCES:
patent: 5693963 (1997-12-01), Fujimoto et al.
Plasma Deposition of GaP and GaN:, Journal Applied Physics vol. 49 (3), J.C. Knights and R.A. Lujan, Mar. 1978, pp. 1291-1293 (1978 American Institute of Physics).
Plasma Deposition of GaAs:, Thin Solid Films, vol. 92, Y. Segui, F. Carrere and A. Bui, 1982, pp. 303-307 (Elsevier Sequoia).

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