Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent
1994-09-06
1996-12-03
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
257 66, 257192, 257914, H01L 2904
Patent
active
055810926
ABSTRACT:
In order to provide TFTs having a low leak current property in its reverse biased state, the active semiconductor layer of the TFTs is doped with an impurity for increasing the band gap thereof, for example, carbon, nitrogen, and oxygen. Also, in order to compensate the decrease in conductivity due to the addition of the impurities, the source and drain regions are provided with or are by themselves formed with metal silicide layers. Further, these low leak current TFTs formed on a substrate are used as pixel transistors in an electro-optical device while peripheral circuits are formed on the same substrate using high mobility TFTs.
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Hayzelden et al., "In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon," 1991-1992.
Bowers Courtney A.
Costellia Jeffrey L.
Crane Sara W.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
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