Gate shorted to body thin film transistor, manufacturing...

Details Gate shorted to body thin film transistor, manufacturing... Gate shorted to body thin film transistor, manufacturing...

2007-09-25

2007-09-25

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S071000, C257S350000, C257S352000, C257SE29117

Reexamination Certificate

active

10910350

ABSTRACT:
A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact coupling the gate metallic layer and the body layer.

REFERENCES:
patent: 3577019 (1971-05-01), Storm
patent: 6104040 (2000-08-01), Kawachi et al.
patent: 2002/0109187 (2002-08-01), Matsumoto et al.
patent: 2004/0124869 (2004-07-01), Lee et al.
patent: 0 816 903 (1998-01-01), None
Assaderaghi, et al., “A Dynamic Threshold Voltage MOSFET (DTMOS) for Ultra-Low Voltage Operation,” Technical Digest, IEEE, pp. 809-812 (Dec. 11, 1994).

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