Gate insulated field effect transistors and method of manufactur

Details Gate insulated field effect transistors and method of manufactur Gate insulated field effect transistors and method of manufactur

1995-06-07

1996-05-07

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material containing...

257 66, 257 72, H01L 2904

Patent

active

055148794

ABSTRACT:
A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is endowed with immunity to illumination incident thereupon which would otherwise impair the normal operation of the transistor. The spoiling impurity is not introduced into transistors which are located in order not to receive light rays.

REFERENCES:
patent: 4818077 (1989-04-01), Ohwada et al.
patent: 5082351 (1992-01-01), Fergason
patent: 5132820 (1992-07-01), Someya et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5383041 (1995-01-01), Yamazaki et al.

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