Gate insulated field effect transistors and method of manufactur

Details Gate insulated field effect transistors and method of manufactur Gate insulated field effect transistors and method of manufactur

1994-08-19

1997-03-25

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 57, 257 58, 257 59, 257 72, H01L 2976, H01L 2904

Patent

active

056147325

ABSTRACT:
A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is endowed with immunity to illumination incident thereupon which would otherwise impair the normal operation of the transistor. The spoiling impurity is not introduced into transistors which are located in order not to receive light rays.

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