Semiconductor device having an ohmic contact and a Schottky cont
Semiconductor device having first and second stacked semiconduct
Semiconductor device having high electron mobility...
Semiconductor device having high gate turn-on voltage
Semiconductor device having MIS structure and its...
Semiconductor device having multiple lateral channels and...
Semiconductor device having multiple lateral channels and...
Semiconductor device having mutually different two gate threshol
Semiconductor device having nitride semiconductor layer
Semiconductor device having ohmic recessed electrode
Semiconductor device having organically doped structure
Semiconductor device having reduced contact resistance between a
Semiconductor device having SiGe channel region
Semiconductor device having substrate-driven field-effect...
Semiconductor device in which GaN-based semiconductor layer...
Semiconductor device including a field effect transistor
Semiconductor device including a group III-V nitride...
Semiconductor device including a lateral field-effect...
Semiconductor device structures which utilize metal sulfides
Semiconductor device strucutre having a two-dimensional electron