Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-10-02
2010-02-02
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
Reexamination Certificate
active
07655963
ABSTRACT:
A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.
REFERENCES:
patent: 4499481 (1985-02-01), Greene
patent: 4570174 (1986-02-01), Huang et al.
patent: 4636823 (1987-01-01), Margalit et al.
patent: 4807022 (1989-02-01), Kazior et al.
patent: 4903089 (1990-02-01), Hollis et al.
patent: 4903189 (1990-02-01), Ngo et al.
patent: 4967243 (1990-10-01), Baliga et al.
patent: 5055889 (1991-10-01), Beall
patent: 5068756 (1991-11-01), Morris et al.
patent: 5106778 (1992-04-01), Hollis et al.
patent: 5126701 (1992-06-01), Adlerstein
patent: 5126714 (1992-06-01), Johnson
patent: 5223449 (1993-06-01), Morris et al.
patent: 5231037 (1993-07-01), Yuan et al.
patent: 5244829 (1993-09-01), Kim
patent: 5292686 (1994-03-01), Riley et al.
patent: 5342795 (1994-08-01), Yuan et al.
patent: 5343071 (1994-08-01), Kazior et al.
patent: 5369042 (1994-11-01), Morris et al.
patent: 5374887 (1994-12-01), Drobnik
patent: 5407842 (1995-04-01), Morris et al.
patent: 5468661 (1995-11-01), Yuan et al.
patent: 5554561 (1996-09-01), Plumton
patent: 5555494 (1996-09-01), Morris
patent: 5610085 (1997-03-01), Yuan et al.
patent: 5624860 (1997-04-01), Plumton et al.
patent: 5700703 (1997-12-01), Huang et al.
patent: 5712189 (1998-01-01), Plumton et al.
patent: 5747842 (1998-05-01), Plumton
patent: 5756375 (1998-05-01), Celii et al.
patent: 5783984 (1998-07-01), Keuneke
patent: 5784266 (1998-07-01), Chen
patent: 5804943 (1998-09-01), Kollman et al.
patent: 5889298 (1999-03-01), Plumton et al.
patent: 5909110 (1999-06-01), Yuan et al.
patent: 5910665 (1999-06-01), Plumton et al.
patent: 5920475 (1999-07-01), Boylan et al.
patent: 5933717 (1999-08-01), Hause et al.
patent: 5956245 (1999-09-01), Rozman
patent: 5956578 (1999-09-01), Weitzel et al.
patent: 6008519 (1999-12-01), Yuan et al.
patent: 6038154 (2000-03-01), Boylan et al.
patent: 6094038 (2000-07-01), Lethellier
patent: 6097046 (2000-08-01), Plumton
patent: 6156611 (2000-12-01), Lan et al.
patent: 6181231 (2001-01-01), Bartilson
patent: 6191964 (2001-02-01), Boylan et al.
patent: 6208535 (2001-03-01), Parks
patent: 6218891 (2001-04-01), Lotfi et al.
patent: 6229197 (2001-05-01), Plumton et al.
patent: 6287908 (2001-09-01), Brand
patent: 6309918 (2001-10-01), Huang et al.
patent: 6323090 (2001-11-01), Zommer
patent: 6348848 (2002-02-01), Herbert
patent: 6362986 (2002-03-01), Schultz et al.
patent: 6477065 (2002-11-01), Parks
patent: 6483724 (2002-11-01), Blair et al.
patent: 6525603 (2003-02-01), Morgan
patent: 6549436 (2003-04-01), Sun
patent: 6661276 (2003-12-01), Chang
patent: 6741099 (2004-05-01), Krugly
patent: 6775159 (2004-08-01), Webb et al.
patent: 6873237 (2005-03-01), Chandrasekaran et al.
patent: 6980077 (2005-12-01), Chandrasekaran et al.
patent: 7012414 (2006-03-01), Mehrotra et al.
patent: 7046523 (2006-05-01), Sun et al.
patent: 7176662 (2007-02-01), Chandrasekaran
patent: 7321283 (2008-01-01), Mehrotra et al.
patent: 7339208 (2008-03-01), Brar et al.
patent: 7417266 (2008-08-01), Li et al.
patent: 7439556 (2008-10-01), Brar et al.
patent: 7439557 (2008-10-01), Brar et al.
patent: 7462891 (2008-12-01), Brar et al.
patent: 7504673 (2009-03-01), Sadaka et al.
patent: 7541640 (2009-06-01), Brar et al.
patent: 2002/0121647 (2002-09-01), Taylor
patent: 2003/0141518 (2003-07-01), Yokogawa et al.
patent: 2003/0198067 (2003-10-01), Sun et al.
patent: 2003/0203583 (2003-10-01), Malik
patent: 2005/0001235 (2005-01-01), Murata et al.
patent: 2005/0024179 (2005-02-01), Chandrasekaran et al.
patent: 2005/0104080 (2005-05-01), Ichihara et al.
patent: 2006/0038650 (2006-02-01), Mehrotra et al.
patent: 2006/0091430 (2006-05-01), Sriram et al.
patent: 2006/0118824 (2006-06-01), Otsuka et al.
patent: 2006/0187684 (2006-08-01), Chandrasekaran et al.
patent: 2006/0197510 (2006-09-01), Chandrasekaran
patent: 2006/0198173 (2006-09-01), Rozman
patent: 2006/0202299 (2006-09-01), Chertouk
patent: 2006/0208279 (2006-09-01), Robinson et al.
patent: 2006/0226477 (2006-10-01), Brar et al.
patent: 2006/0226478 (2006-10-01), Brar et al.
patent: 2006/0255360 (2006-11-01), Brar et al.
patent: 2007/0007579 (2007-01-01), Scheuerlein et al.
patent: 2007/0069286 (2007-03-01), Brar et al.
patent: 2007/0145417 (2007-06-01), Brar et al.
patent: 2007/0187717 (2007-08-01), Sadaka et al.
patent: 2007/0296028 (2007-12-01), Brar et al.
patent: 2007/0298559 (2007-12-01), Brar et al.
patent: 2007/0298564 (2007-12-01), Brar et al.
patent: 2008/0048173 (2008-02-01), Sadaka et al.
patent: 2008/0048219 (2008-02-01), Brar et al.
patent: 2008/0054304 (2008-03-01), Sadaka et al.
patent: 1 256 985 (2002-11-01), None
patent: 1 638 147 (2006-03-01), None
patent: WO 2005/015642 (2005-02-01), None
Asano, K., et al., “Novel High Power AlGaAs/GaAs HFET with a Field-Modulating Plate Operated at 35V Drain Voltage,” IEDM 98, 1998, pp. 59-62, IEEE, Los Alamitos, CA.
Berroth, M., et al., “Extreme Low Power 1:4 Demultiplexer Using Double Delta Doped Quantum Well GaAs/AlGaAs Transistors,” Japanese Journal of Applied Physics, Extended Abstracts of the 22nd 1990 International Conference on Solid State Devices and Materials, 1990, pp. 75-78, Tokyo, Japan.
Eisenbeiser, K., et al., “Manufacturable GaAs VFET for Power Switching Applications,” IEEE Electron Device Letters, Apr. 2000, pp. 144-145, vol. 21, No. 4, IEEE.
Kollman, R., et al., “10 MHz PWM Converters with GaAs VFETs,” IEEE Eleventh Annual Applied Power Electronics Conference and Exposition, Mar. 1996, pp. 264-269, vol. 1, IEEE.
Lan, E., et al., “A Field Plate Device by Self-Aligned Spacer Process,” The International Conference on Compound Semiconductor Manufacturing Technology, 2004, pp. 35-38, GaAs Mantech, St. Louis, MO.
Liu, W., “Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs,” §5-5: Modulation Doping, 1999, pp. 323-330, John Wiley & Sons, New York, NY.
Nguyen, L.D., et al., “Ultra-High-Speed Modulation-Doped Field-Effect Transistors: A Tutorial Review,” Proceedings of the IEEE, Apr. 1992, pp. 494-518, vol. 80, No. 4, IEEE.
Niemela, V.A., et al., “Comparison of GaAs and Silicon Synchronous Rectifiers in a 3.3V Out, 50W DC-DC Converter,” 27th Annual, IEEE Power Electronics Specialists Conference, Jun. 1996, pp. 861-867, vol. 1, IEEE.
Plumton, D.L., et al., “A Low On-Resistance High-Current GaAs Power VFET,” IEEE Electron Device Letters, Apr. 1995, pp. 142-144, vol. 16, No. 4, IEEE.
Sickmiller, M., “Packaging of Ultrathin Semiconductor Devices Through the ELO Packaging Process,” Mat. Res. Soc. Symp. Proc., 2001, pp. I7.3.1-I7.3.6, vol. 681E, Materials Research Society, Warrendale, PA.
Tkachenko, Y., et al., “Improved Breakdown Voltage and Hot-Electron Reliability PHEMT for High Efficiency Power Amplifiers,” Asia Pacific Microwave Conference (AMPC'99), Nov. 30, 1999, pp. 618-621, vol. 3, IEEE, Los Alamitos, CA.
Weitzel, C.E., “RF Power Devices for Wireless Communications,” 2002 IEEE MTT-S CDROM, 2002, pp. 285-288, paper TU4B-1, IEEE, Los Alamitos, CA.
Williams, R., “Modern GaAs Processing Methods,” 1990, pp. 66-67, Artech House, Inc.,
Brar Berinder P. S.
Ha Wonill
Nguyen Chanh Ngoc Minh
Sadaka Mariam Gergi
Dickey Thomas L
Flextronics International USA, Inc.
Slater & Matsil L.L.P.
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