Semiconductor device having mutually different two gate threshol

Details Semiconductor device having mutually different two gate threshol Semiconductor device having mutually different two gate threshol

1997-09-29

2000-06-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257195, 438571, 438572, H01L 31072, H01L 31109, H01L 310328, H01L 310336

Patent

active

060780673

ABSTRACT:
On a semiconductor substrate, a channel layer, an electron supply layer, a third semiconductor layer, a second etching stopper layer, a second semiconductor layer and a first etching stopper layer and a first semiconductor layer are grown in sequential order to form E-type and D-type FETs. The third semiconductor layer and the second semiconductor layer have equal layer thickness, and the second etching stopper layer and the first etching stopper layer have the equal layer thickness. Thus, Vth of the E-type and D-type FETs can be controlled at the predetermined value with high reproduction ability.

REFERENCES:
patent: 4615102 (1986-10-01), Suzuki et al.
patent: 4733283 (1988-03-01), Kuroda
patent: 5021857 (1991-06-01), Suehiro

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