Semiconductor device in which GaN-based semiconductor layer...

Details Semiconductor device in which GaN-based semiconductor layer... Semiconductor device in which GaN-based semiconductor layer...

2006-03-30

2010-06-01

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S094000, C257S194000, C257SE29246

Reexamination Certificate

active

07728353

ABSTRACT:
A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or an opposite side of the first semiconductor layer.

REFERENCES:
patent: 5557115 (1996-09-01), Shakuda
patent: 2001/0040246 (2001-11-01), Ishii
patent: 2003/0180977 (2003-09-01), Suzuki et al.
patent: 2004/0051112 (2004-03-01), Moon et al.
patent: 2005/0023555 (2005-02-01), Yoshida et al.
patent: 2005/0145883 (2005-07-01), Beach et al.
patent: 2006/0060871 (2006-03-01), Beach
patent: 11-251253 (1999-09-01), None
patent: 2000-349338 (2000-12-01), None

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