Semiconductor device having nitride semiconductor layer

Details Semiconductor device having nitride semiconductor layer Semiconductor device having nitride semiconductor layer

2006-07-20

2010-12-28

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29253, C257SE29254

Reexamination Certificate

active

07859018

ABSTRACT:
A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes.

REFERENCES:
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patent: 5576570 (1996-11-01), Ohsawa et al.
patent: 6476431 (2002-11-01), Ohno et al.
patent: 2000-004047 (2000-01-01), None
patent: 2001-168111 (2001-06-01), None
patent: 2003-059948 (2003-02-01), None

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