Semiconductor device having high gate turn-on voltage

Details Semiconductor device having high gate turn-on voltage Semiconductor device having high gate turn-on voltage

1997-09-25

1999-10-12

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257190, 257280, H01L 310328

Patent

active

059659092

ABSTRACT:
The semiconductor device comprises a substrate, a channel layer formed on the substrate, a first barrier layer formed on the channel layer, being an indirect transition semiconductor layer containing Al and P and being not lattice-matched with the substrate, and an electrode formed above the first barrier layer. The first barrier layer having a wide band gap and having a high barrier to electrons is formed below the electrodes, whereby a high gate turn-on voltage can be available.

REFERENCES:
patent: 5504353 (1996-04-01), Kuzuhara
patent: 5548139 (1996-08-01), Ando
Elizabeth Glass et al. "A High Efficiency Complementary GaAs Power FET Technology for Single Supply Portable Application", IEEE, 1996.

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