Semiconductor device having first and second stacked semiconduct

Details Semiconductor device having first and second stacked semiconduct Semiconductor device having first and second stacked semiconduct

1995-08-21

1997-12-23

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 31336, H01L 31072, H01L 31109

Patent

active

057010196

ABSTRACT:
A semiconductor device (e.g., hetero-junction field-effect transistor) which has decreased capacitance between the gate and drain, and which has decreased source resistance, is provided. Structure in which a contact layer 6 comes in contact with the side surfaces of a channel layer 3 but does not come in contact with the side surfaces of a barrier layer 4 enables capacitance between the gate and drain to be decreased. This capacitance can be decreased down to 1.5 pF per 10 .mu.m of the width.

REFERENCES:
patent: 4727403 (1988-02-01), Hida et al.
patent: 4788156 (1988-11-01), Stoneham et al.

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