Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-03-22
2011-03-22
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29246
Reexamination Certificate
active
07910955
ABSTRACT:
A channel layer (11) made of compound semiconductor and a barrier layer (12) made of compound semiconductor having a band gap wider than the channel layer are formed over a substrate. A gate insulating film (13) made of first insulating material is formed on the barrier layer over the channel region. A gate electrode (23) is formed on a partial area of the gate insulating film. A protective film is disposed on the gate insulating film on both sides of the gate electrode. The protective film comprises a lower protective film (14) made of second insulating material whose etching resistance is different from the first insulating material and an upper protective film (15) made of third insulating film whose etching resistance is different from the second insulating material. A source electrode and a drain electrode are electrically connected to the channel layer on both sides of the gate electrode.
REFERENCES:
patent: 6051454 (2000-04-01), Anda et al.
patent: 6483135 (2002-11-01), Mizuta et al.
patent: 6627473 (2003-09-01), Oikawa et al.
patent: 6867078 (2005-03-01), Green et al.
patent: 7041541 (2006-05-01), Behammer
patent: 7045404 (2006-05-01), Sheppard et al.
patent: 7229903 (2007-06-01), Li et al.
patent: 7238560 (2007-07-01), Sheppard et al.
patent: 7432563 (2008-10-01), Behammer
patent: 7501669 (2009-03-01), Parikh et al.
patent: 2001/0017370 (2001-08-01), Sheppard et al.
patent: 2002/0005528 (2002-01-01), Nagahara
patent: 2003/0087496 (2003-05-01), Beasom
patent: 2004/0124435 (2004-07-01), D'Evelyn et al.
patent: 2005/0145883 (2005-07-01), Beach et al.
patent: 2005/0170574 (2005-08-01), Sheppard et al.
patent: 2006/0019435 (2006-01-01), Sheppard et al.
patent: 2006/0102929 (2006-05-01), Okamoto et al.
patent: 2006/0202272 (2006-09-01), Wu et al.
patent: 2007/0018199 (2007-01-01), Sheppard et al.
patent: 2007/0164321 (2007-07-01), Sheppard et al.
patent: 2007/0164322 (2007-07-01), Smith et al.
patent: 4-340231 (1992-11-01), None
patent: 04-340231 (1992-11-01), None
patent: 06/120253 (1994-04-01), None
patent: 6-177163 (1994-06-01), None
patent: 7-183315 (1995-07-01), None
patent: 09-092816 (1997-04-01), None
patent: WO 2004/055905 (2004-07-01), None
E.M. Chumbes, et al.; “Microwave Performance of AlGaN/GaN Metal Insulator Semiconductor Field Effect Transistors on Sapphire Substrates;”IEEE Transactions on Electron Devices; vol. 48; No. 3; Mar. 2001; pp. 416-419 (2 Sheets).
V. Adivarahan, et al.; “Submicron Gate Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors;”IEEE Electron Device Letters; No. 24; No. 9; Sep. 2003; pp. 541-543 (2 Sheets).
M. Ochiai, et al; “AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4Gate Insulator;”Jpn. J. Appl. Phys.; vol. 42; Part 1; No. 4B; Apr. 2003; pp. 2278-2280 (2 Sheets).
Supplementary European Search Report dated Jun. 15, 2009.
Office Action dated Feb. 1, 2011 corresponding to Japanese Patent Application No. 2007-500417 with English translation.
Endoh Akira
Yamashita Yoshimi
Fujitsu Limited
Kratz Quintos & Hanson, LLP
Sengdara Vongsavanh
Tran Minh-Loan T
LandOfFree
Semiconductor device having MIS structure and its... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having MIS structure and its..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having MIS structure and its... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2692508