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One time programmable memory and the manufacturing method...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One time programmable memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One transistor DRAM cell structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One transistor DRAM cell structure and method for forming

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One transistor ferroelectric memory cell and method of making th

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One transistor flash memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One transistor flash memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One transistor SOI non-volatile random access memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One transistor SOI non-volatile random access memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One-cylinder stack capacitor and method for fabricating the...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One-sided floating-gate memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One-sided ozone TEOS spacer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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One-time programmable read only memory and operating method...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One-time UV-programmable non-volatile semiconductor memory...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One-transistor composite-gate memory

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One-transistor composite-gate memory

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One-transistor floating-body DRAM cell in bulk CMOS process...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
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One-transistor memory cell configuration and method for its...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One-transistor one-capacitor memory cell structure for DRAMs

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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One-transistor RAM approach for high density memory application

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
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