One-time programmable read only memory and operating method...

Details One-time programmable read only memory and operating method... One-time programmable read only memory and operating method...

2005-06-02

2008-10-14

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S529000, C257S530000

Reexamination Certificate

active

07436028

ABSTRACT:
A one-time programmable read only memory is provided. The memory includes a substrate, a select transistor, an electrode and a dielectric layer. The select transistor is formed on the substrate. The electrode is formed over the source region of the select transistor. The dielectric layer is formed between the electrode and the source region of the select transistor. Digital data is stored in the memory through the breakdown or not of the dielectric layer.

REFERENCES:
patent: 5331196 (1994-07-01), Lowrey et al.
patent: 2004/0007725 (2004-01-01), Son
patent: 2005/0093079 (2005-05-01), Lee et al.
patent: 2005/0157545 (2005-07-01), Hosomi et al.
patent: 2007/0023810 (2007-02-01), Baik et al.

Affiliated with

Also associated with

Rating

One-time programmable read only memory and operating method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with One-time programmable read only memory and operating method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and One-time programmable read only memory and operating method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3993614