One-transistor composite-gate memory

Details One-transistor composite-gate memory One-transistor composite-gate memory

2007-09-11

2007-09-11

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

10926675

ABSTRACT:
One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be assigned a data value, providing the ability to store one or more bits of data in a single memory cell. To control the threshold voltage, the oxygen vacancies may be manipulated by trapping electrons within the vacancies, freeing trapped electrons from the vacancies, moving the vacancies within the trapping layer and annihilating the vacancies.

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