One transistor DRAM cell structure and method for forming

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S314000, C257SE27085

Reexamination Certificate

active

06861689

ABSTRACT:
A single transistor DRAM cell is formed in a SOI substrate so that the DRAM cells are formed in bodies that are electrically isolated from each other. Each cell has doped regions that act as source and drain contacts. Between the drain contact and the body is a region, which aids in impact ionization and thus electron/hole formation during programming that is the same conductivity type as the body but of a higher concentration than the body. Adjacent to the source contact and to the body is a region, which aids in diode current during erase, that is the same conductivity type as the source contact but of a lower concentration than the source contact.

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