One-sided ozone TEOS spacer

Details One-sided ozone TEOS spacer One-sided ozone TEOS spacer

1992-03-23

1994-02-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257530, 257900, 365 96, 365105, H01L 2702, G11C 1700

Patent

active

052869938

ABSTRACT:
The present invention provides a programmable structure for a programmable read-only memory (PROM) which utilizes one-sided ozone spacers constructed on the digit lines as one time programmable nodes. An oxide
itride/oxide layer (ONO) is used as an interface between underlying parallel rows of digit lines, having one-sided ozone spacers, and overlying parallel columns of word lines in a programmable read only memory With a each digit line passing under each word line in a row/column matrix is formed thereby providing a programmable digit/word line matrix. Each crossing point of the digit and word lines in the matrix will be permanently programmed to either a one or a zero by rupturing the thin ONO dielectric interface by applying the appropriate voltage potential between the associated digit/word line conductors.

REFERENCES:
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 5084406 (1992-01-01), Rhodes et al.
patent: 5100826 (1992-03-01), Dennison
patent: 5142438 (1992-08-01), Reinberg

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