Use of gate electrode workfunction to improve DRAM refresh
Use of high-K dielectric material for ONO and tunnel oxide...
Use of high-K dielectric material in modified ONO structure...
Use of high-k dielectric materials in modified ONO structure...
Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch r
Use of nitric oxide surface anneal to provide reaction...
Use of spacers as floating gates in EEPROM with doubled storage
Use of voids between elements in semiconductor structures...
Using a change in doping of poly gate to permit placing both...
Using epitaxially grown wells for reducing junction...
Using metal/metal nitride bilayers as gate electrodes in...
Using oxynitride spacer to reduce parasitic capacitance in...
UV-blocking layer for reducing UV-induced charging of SONOS...
UV-programmable P-type mask ROM