4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Combined with electrical contact or lead
  6. Of specified material other than unalloyed aluminum
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Trench structure having a germanium silicate region

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Tri-directional interconnect architecture for SRAM

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Tri-layer titanium coating for an aluminum layer of a semiconduc

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Triple self-aligned metallurgy for semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Tungsten layer formation method for semiconductor device and...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Tungsten liner process for simultaneous formation of integral co

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Tungsten tunnel-free process

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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