Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-10-06
1999-08-03
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257774, 257764, 257700, 257750, 257758, 257734, 438653, 438654, 438656, H01L 2348, H01L 2352, H01L 2940
Patent
active
059329297
ABSTRACT:
An improved method of forming a tunnel-free tungsten plug is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer of borophospho-tetraethoxysilane (BP-TEOS) is deposited overlying the semiconductor device structures. Contact openings are etched through the insulating layer to the underlying semiconductor device structures wherein a tunnel opens in the insulating layer between contact openings. The semiconductor substrate is covered with a first barrier metal layer. The semiconductor substrate is coated with a spin-on-glass layer wherein the contact openings and the tunnel are filled with the spin-on-glass. The spin-on-glass is anisotropically etched away whereby the spin-on-glass remains only within the tunnel. The semiconductor substrate is covered with a second barrier metal layer. The contact openings are filled with tungsten which is etched back to form tungsten plugs within the contact openings wherein the filled tunnel provides tunnel-free tungsten plugs in the fabrication of the integrated circuit device.
REFERENCES:
patent: 5296400 (1994-03-01), Park et al.
patent: 5340774 (1994-08-01), Yen
patent: 5364817 (1994-11-01), Lur et al.
patent: 5385858 (1995-01-01), Manabe
patent: 5644151 (1997-07-01), Izumi et al.
Chen Shun-Hsiang
Chung Ming-Chih
Lui Hon-Shung
Ackerman Stephen B.
Jr. Carl Whitehead
Pike Rosemary L.S.
Saile George O.
Taiwan Semiconductor Manufacturing Company Ltd
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