Tri-layer titanium coating for an aluminum layer of a semiconduc

Details Tri-layer titanium coating for an aluminum layer of a semiconduc Tri-layer titanium coating for an aluminum layer of a semiconduc

1992-07-15

1994-02-22

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257763, 257913, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

052890350

ABSTRACT:
A tri-layer titanium coating for an aluminum layer of a semiconductor device. An aluminum layer used for interconnecting individual devices of an integrated circuit is formed on a semiconductor material. A first titanium nitride layer is deposited on the aluminum layer. A titanium layer is deposited on the first titanium nitride layer. A second titanium nitride layer is then deposited on the titanium layer. The tri-layer titanium coating prevents the formation of Al.sub.2 O.sub.3 and AIF.sub.3 during the etching of a via hole in an intermetal dielectric layer deposited above the second titanium nitride layer.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4804636 (1989-02-01), Grover, III et al.
patent: 5101260 (1992-03-01), Nath et al.
patent: 5124780 (1992-06-01), Sandhu et al.

Affiliated with

Also associated with

Rating

Tri-layer titanium coating for an aluminum layer of a semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tri-layer titanium coating for an aluminum layer of a semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tri-layer titanium coating for an aluminum layer of a semiconduc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-173887