Trench structure having a germanium silicate region

Details Trench structure having a germanium silicate region Trench structure having a germanium silicate region

1992-10-19

1993-10-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257394, 257622, 257640, H01L 2702, H01L 2348

Patent

active

052548732

ABSTRACT:
A trench structure (10) using germanium silicate. The trench structure (10) has a substrate material (12) and a hard mask material (14) that overlies the substrate material (12). An opening is formed in the hard mask material and the opening is used to form a trench (16) in the substrate material (12). The trench (16) has a sidewall portion and a bottom portion. A barrier (18 and 20) is formed overlying the bottom portion of the trench (16) and adjacent to the sidewall portion of the trench (16). A planar germanium silicate region (22) is formed overlying the barrier (18 and 20).

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