Tungsten liner process for simultaneous formation of integral co

Details Tungsten liner process for simultaneous formation of integral co Tungsten liner process for simultaneous formation of integral co

1993-01-19

1995-07-18

Fourson, George

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

437187, 437192, 437194, 437197, H01L 23485, H01L 2144

Patent

active

054344514

ABSTRACT:
Tungsten studs and tungsten lined studs that make low resistance thermally stable ohmic or Schottky contacts to active devices on a semiconductor substrate are made by first defining a triplex metallurgical structure. The triplex metallurgical structure includes an ohmic layer, a barrier layer and a sacrificial layer. Then, a blanket layer of insulator is deposited and polished, or etched, or both, until the stud metallurgy is exposed. The sacrificial layer is then etched out, leaving holes self-aligned to the contacts and to the ohmic and the barrier layers. A blanket layer of CVD tungsten is then deposited and the substrate is polished, or etched, or both, to remove excess tungsten. The metal contact studs can be simultaneously formed with patterned interconnection lines which are self-aligned to each other and also to the contact studs.

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patent: 4884123 (1989-11-01), Dixit et al.
patent: 5008216 (1991-04-01), Huang et al.
Ellwanger, et al. "An Integrated Aluminum/CVD-W Metallization Process" 1991 Proc. 8th International IEEE VLSI Multilevel Interconnect Conf. (Jun. 11-12, 1991) pp. 41-50.

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