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Method of programming phase-change memory element

Static information storage and retrieval – Systems using particular element – Resistive
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Method of programming, erasing and repairing a memory device

Static information storage and retrieval – Systems using particular element – Resistive
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Method to program a memory cell comprising a carbon nanotube...

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Method to program a memory cell comprising a carbon nanotube...

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Method, apparatus and computer program product for read...

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Methods and structure for maximizing signal to noise ratio...

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Methods for generating a reference voltage and for reading a...

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Methods for generating a reference voltage and for reading a...

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Methods for resistive memory element sensing using averaging

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Methods for resistive memory element sensing using averaging

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Methods of operating a bistable resistance random access...

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Methods of operating a non-volatile memory device

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Microelectronic programmable device and methods of forming...

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Monotonic counter using memory cells

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Monotonic counter using memory cells

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Multi-level memory cell utilizing measurement time delay as...

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Multi-level memory cell utilizing measurement time delay as...

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Multi-level memory device and methods for programming and...

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Multi-level nonvolatile memory device using variable...

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Multi-pulse reset write scheme for phase-change memories

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