Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-03-27
2010-02-23
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
Reexamination Certificate
active
07667999
ABSTRACT:
A method to form a rewriteable nonvolatile memory cell is disclosed, the cell comprising a steering element in series with a carbon nanotube fabric. The steering element is preferably a diode, but may also be a transistor. The carbon nanotube fabric reversibly changes resistivity when subjected to an appropriate electrical pulse. The different resistivity states of the carbon nanotube fabric can be sensed, and can correspond to distinct data states of the memory cell. A first memory level of such memory cells can be monolithically formed above a substrate, a second memory level monolithically formed above the first, and so on, forming a highly dense monolithic three dimensional memory array of stacked memory levels.
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Herner S. Brad
Scheuerlein Roy E.
Dugan & Dugan PC
Ho Hoai V
Sandisk 3D LLC
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