Multi-level nonvolatile memory device using variable...

Details Multi-level nonvolatile memory device using variable... Multi-level nonvolatile memory device using variable...

2009-03-05

2011-12-20

Hidalgo, Fernando (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S158000, C365S159000, C365S171000, C365S189150, C365S189070, C365S189090

Reexamination Certificate

active

08081501

ABSTRACT:
A multi-level nonvolatile memory device using variable resistive element with improved reliability of read operations is provided. A multi-level nonvolatile memory device comprises a multi-level memory which includes a resistance element, wherein the resistance level of the resistance element is variable depending on data stored in the multi-level memory cell, and a read circuit which provides the multi level memory cell with a read bias and performs a sensing operation in response to the read bias, wherein the read bias has at least two levels during a read cycle.

REFERENCES:
patent: 7391644 (2008-06-01), Cho et al.
patent: 7548467 (2009-06-01), Kim et al.
patent: 7639522 (2009-12-01), Cho et al.
patent: 2009/0262573 (2009-10-01), Choi et al.
patent: 09-069295 (1997-03-01), None
patent: 2006-172707 (2006-06-01), None
patent: 1020000033906 (2000-06-01), None
patent: 1020000056516 (2000-09-01), None

Affiliated with

Also associated with

Rating

Multi-level nonvolatile memory device using variable... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-level nonvolatile memory device using variable..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-level nonvolatile memory device using variable... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4262269