Method of programming, erasing and repairing a memory device

Details Method of programming, erasing and repairing a memory device Method of programming, erasing and repairing a memory device

2006-12-05

2011-12-13

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S175000

Reexamination Certificate

active

08077495

ABSTRACT:
A method of programming and erasing a memory device is provided. The memory device includes first and second electrodes and a switching layer therebetween. A first on-state resistance characteristic of the memory device is provided in programming the memory device by application of a first voltage to the gate of a transistor in series with the memory device. Other on-state resistance characteristics of the memory device, different from the first on-state resistance characteristic, may be provided by application of other voltages, different from the first voltage, to the gate of the transistor.

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