Multi-level memory device and methods for programming and...

Details Multi-level memory device and methods for programming and... Multi-level memory device and methods for programming and...

2007-02-20

2007-02-20

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S177000

Reexamination Certificate

active

10465012

ABSTRACT:
A multilevel memory core includes a word line and a bit line. The multilevel memory core also includes a core cell in electrical communication with the word line and the bit line. The core cell includes a threshold changing material. The threshold changing material is programmed to define multiple levels for storage where each of the multiple levels for storage is associated with a corresponding threshold voltage. Methods for reading the multilevel memory core also are described.

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S. Lai and T. Lowrey, “OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications,”IEDM Dig. (2001), pp. 803-806.

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