Methods of operating a non-volatile memory device

Details Methods of operating a non-volatile memory device Methods of operating a non-volatile memory device

2007-07-12

2009-12-22

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S046000, C365S100000, C365S180000

Reexamination Certificate

active

07636251

ABSTRACT:
A nonvolatile memory device may be operated in a multi-bit mode at a lower operating current and with higher integrated of the memory device. A first buried electrode may be used as a first bit line, a second buried electrode may be used as a second bit line, and/or a gate electrode may be used as a word line. First and second resistance layers may be programmed with 2-bit data and the 2-bit data may be read from the first and second resistance layers. More than 2-bit data may be programmed and read using more than 2 buried electrodes.

REFERENCES:
patent: 6570788 (2003-05-01), Nakamura
patent: 7259387 (2007-08-01), Kawazoe et al.
patent: 2006/0006457 (2006-01-01), Ono

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