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Fabrication of a field effect transistor with an upside down...

Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
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Fabrication of low resistance, non-alloyed, ohmic contacts...

Semiconductor device manufacturing: process – Forming schottky junction – Combined with formation of ohmic contact to semiconductor...
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Fabrication of metal contacts for deep-submicron technologies

Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
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Field effect device with reduced thickness gate

Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
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Field effect transistor and method for fabricating the same

Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
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Field plated schottky diode and method of fabrication therefor

Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
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Forming metal silicide on silicon-containing features of a...

Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
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Fully nickel silicided metal gate with shallow junction formed

Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
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Fully silicided gate electrodes and method of making the same

Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
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FUSI integration method using SOG as a sacrificial...

Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
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FUSI integration method using SOG as a sacrificial...

Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
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