FUSI integration method using SOG as a sacrificial...

Details FUSI integration method using SOG as a sacrificial... FUSI integration method using SOG as a sacrificial...

2006-01-24

2010-06-08

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Forming schottky junction

Using platinum group metal

C438S583000, C438S663000, C257SE29156

Reexamination Certificate

active

07732312

ABSTRACT:
A method for making a transistor20that includes using a transition metal nitride layer200and/or a SOG layer220to protect the source/drain regions60from silicidation during the silicidation of the gate electrode90. The SOG layer210is planarized to expose the transition metal nitride layer200or the gate electrode93before the gate silicidation process. If a transition metal nitride layer200is used, then it is removed from the top of the gate electrode93before the full silicidation of the gate electrode90.

REFERENCES:
patent: 5683939 (1997-11-01), Schrantz et al.
patent: 6001726 (1999-12-01), Nagabushnam et al.
patent: 2005/0179098 (2005-08-01), Chan et al.
patent: 2006/0006476 (2006-01-01), Biery et al.
patent: 2006/0228885 (2006-10-01), Saito
Jiong-Ping Lu, et al., “An Integration Scheme for Using Silicided Dual Work Function Metal Gates” U.S. Appl. No. 10/851,750, filed May 20, 2004.
Jiong-Ping Lu, et al., “A Method for Manufacturing a Semiconductor Device Having a Silicided Gate Electrode and a Method for Manufacturing an Integrated Circuit Including the Same” U.S. Appl. No. 10/810,759, filed Mar. 26, 2004.
Freidoon Mehrad, et al., “Method to Obtain Fully Silicided Poly Gate” U.S. Appl. No. 11/201,924, filed Aug. 11, 2005.

Affiliated with

Also associated with

Rating

FUSI integration method using SOG as a sacrificial... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with FUSI integration method using SOG as a sacrificial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FUSI integration method using SOG as a sacrificial... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4175951