Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2006-03-24
2008-12-02
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S581000, C438S682000, C257SE21439
Reexamination Certificate
active
07459382
ABSTRACT:
A semiconductor structure is fabricated with reduced gate capacitance by thinning of a gate electrode to provide a reduced thickness gate electrode. The gate electrode is thinned after forming a spacer layer adjoining the gate electrode. In addition, the height of the spacer layer may also be reduced. The spacer layer thus has an enhanced horizontal width desired for locating an intrinsic source/drain with respect to an extension region and in particular, an enhanced horizontal width relative to the spacer height. The reduced thickness gate electrode may be fully silicided to provide decreased gate resistance. A raised source/drain layer may be located upon the intrinsic source/drain region. The raised source/drain layer may have a top surface higher than the reduced thickness gate electrode. In addition, the raised source/drain layer may have a top surface higher than the reduced height spacer layer.
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Amos Ricky S.
Natzle Wesley C.
Panda Siddhartha
Tessier Brian L.
Abate Esq. Joseph P.
Geyer Scott B.
International Business Machines - Corporation
Nikmanesh Seahvosh J
Scully Scott Murphy & Presser
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