Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2005-03-18
2009-02-03
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S584000
Reexamination Certificate
active
07485556
ABSTRACT:
A metal silicide layer is formed on silicon-containing features of a substrate in a chamber. A metal film is sputter deposited on the substrate and a portion of the sputter deposited metal film is silicided. In the process, sputtering gas is energized by applying an electrical bias potential across the metal sputtering target and the substrate support to sputter deposit metal from a target onto the substrate. At least a portion of the deposited sputtered metal is silicided by heating the substrate to a silicidation temperature exceeding about 200° C. to form a combined sputtered metal and metal silicide layer on the substrate. The remaining sputtered metal can be silicided by maintaining the substrate at the silicidation temperature to form the metal silicide layer.
REFERENCES:
patent: 6579783 (2003-06-01), Saigal et al.
patent: 6605513 (2003-08-01), Paton et al.
patent: 2006/0024963 (2006-02-01), Yue et al.
patent: 2006/0130746 (2006-06-01), Terashima et al.
patent: 2006/0175664 (2006-08-01), Ramaswamy et al.
patent: WO 2004042809 (2004-05-01), None
Tice et al.; “Endura XP: Enabling High Productivity and Reliability . . . ” Applied Materials, Inc., date unknown.
Byun et al.; “Thermally Stable Nickel Silicide Formation by . . . ” Applied Materils, Inc., date unknown.
Lavoie et al; “Towards Implementation of a nickel silicide process . . . ” Microelectronic Engineering 70 (2003) 144-157.
Lauwers et al.; “Materials aspects, electrical performance, and a . . . ” J. Vac. Sci. Technol. B 16(6) Nov./Dev 2001.
Lu et al.; “A Novel Nickel SALICIDE Process Technology . . . ” Silicon Technology Development Instruments, date unknown.
Byun Jeong Soo
Le Hien-Minh Huu
Lei Jianxin
Yang Lisa
Applied Materials Inc.
Janah & Associates P.C.
Le Thao P.
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