Field effect transistor and method for fabricating the same

Details Field effect transistor and method for fabricating the same Field effect transistor and method for fabricating the same

2011-06-21

2011-06-21

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

C438S579000, C257SE21064

Reexamination Certificate

active

07964486

ABSTRACT:
A method for fabricating a field effect transistor includes: forming an insulating film provided on a semiconductor layer, the insulating film having an opening via which a surface of the semiconductor layer is exposed and including silicon oxide; forming a Schottky electrode on the insulating film and in the opening, the Schottky electrode having an overhang portion and having a first contact layer that is provided in a region contacting the insulating film and contains oxygen, and a second contact layer that is provided on the first contact layer and contains a smaller content of oxygen than that of the first contact layer; and removing the insulating film by a solution including hydrofluoric acid.

REFERENCES:
patent: 5496748 (1996-03-01), Hattori et al.
patent: 5693560 (1997-12-01), Hattori et al.
patent: 6114241 (2000-09-01), Choi et al.
patent: 4-246836 (1992-09-01), None
patent: 6-163605 (1994-06-01), None
patent: 7-86310 (1995-03-01), None
Japanese Office Action dated Feb. 24, 2009, issued in corresponding Japanese Patent Application No. 2007-028603.

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