4. Active solid-state devices (e.g., transistors, solid-state diode
  5. With means to increase breakdown voltage threshold
  6. In integrated circuit
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Semiconductor device with improved resurf features including...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Semiconductor device, method for manufacturing the same, and...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Semiconductor element and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Semiconductor integrated circuit with solder bump

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Semiconductor structure having one or more lateral, high-blockin

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Patent

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Structure and method for RESURF diodes with a current diverter

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Trench MOS RESURF super-junction devices

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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