Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2006-07-04
2006-07-04
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S493000, C257S339000, C257S343000, C257S509000, C257S512000, C257SE27064, C257SE21630
Reexamination Certificate
active
07071527
ABSTRACT:
A p-channel MOSFET (1) includes a semiconductor substrate (2), an epitaxial region (3), a second diffusion region (6), and a drain region. The epitaxial region (3) is formed on the upper surface of the semiconductor substrate (2). The second diffusion region (6) is formed in a predetermined upper surface area of the epitaxial region (3). The second diffusion region (6) has a central portion (6a) and a peripheral portion (6b). The central portion (6a) is formed substantially at the center of the epitaxial region (3) and formed thicker than the peripheral portion (6b). The peripheral portion (6b) is formed in an annular shape so as to surround the central portion (6a). The drain region (7) is formed in an upper surface area of the central portion (6a) of the second diffusion region (6).
REFERENCES:
patent: 4866495 (1989-09-01), Kinzer
patent: 5512769 (1996-04-01), Yamamoto
patent: 5686754 (1997-11-01), Choi et al.
patent: 5801431 (1998-09-01), Ranjan
patent: 6507085 (2003-01-01), Shimizu
patent: 6642599 (2003-11-01), Watabe et al.
patent: 6680515 (2004-01-01), Hsing
patent: 6693308 (2004-02-01), Sankin et al.
patent: 6900091 (2005-05-01), Williams et al.
patent: 2003/0228721 (2003-12-01), Efland et al.
patent: 2005/0104124 (2005-05-01), Iwabuchi
patent: 53-045978 (1978-04-01), None
patent: 02-218153 (1990-08-01), None
Fenty Jesse A.
Howard & Howard
Parker Kenneth
Sanken Electric Co. Ltd.
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