Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2005-05-19
2008-12-16
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S493000, C257S262000, C257S343000, C257S339000
Reexamination Certificate
active
07466006
ABSTRACT:
Methods and apparatus are provided for reducing substrate leakage current of lateral RESURF diode devices. The diode device (60, 60′, 100) comprises first (39) and second (63) surface terminals overlying a semiconductor substrate (22) coupled to P (38, 32, 26) and N (24, 30, 46) type regions providing the diode action. An unavoidable parasitic vertical device (54, 92) permits leakage current to flow from the first terminal (39) to the substrate (22). This leakage current is reduced by having the diode device second terminal (63) comprise both N (46) and P (62) type regions coupled together by the second terminal (63). This forms a shorted base-collector lateral transistor (72) between the first (39) and second (63) terminals to provide the diode function. The gain of this lateral transistor (72) increases the proportion of first terminal (39) current that flows to the second terminal (63) rather than the substrate (22). In preferred embodiments, the first (39) or second (63) terminal is also ohmically coupled to a buried layer (24) that overlies the substrate (22) beneath the shorted base-collector lateral transistor (72).
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Freescale Semiconductor, Inc. U.S. Appl. No. 10/836,170 filed on Apr. 30, 2004 entitled, “Semiconductor Device and Method of Forming the Same.”
Bose Amitava
Khemka Vishnu K.
Zhu Ronghua
Freescale Semiconductor Inc.
Ho Anthony
Ingrassia Fisher & Lorenz P.C.
Jackson Jerome
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