Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2007-11-13
2007-11-13
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
Reexamination Certificate
active
10761235
ABSTRACT:
A p impurity region (3) defines a RESURF isolation region in an n−semiconductor layer (2). A trench isolation structure (8a) and the p impurity region (3) together define a trench isolation region in the n−semiconductor layer (2) in the RESURF isolation region. An nMOS transistor (103) is provided in the trench isolation region. A control circuit is provided in the RESURF isolation region excluding the trench isolation region. An n+buried impurity region (4) is provided at the interface between the n−semiconductor layer (2) and a p−semiconductor substrate (1), and under an n+impurity region7connected to a drain electrode (14) of the nMOS transistor (103).
REFERENCES:
patent: 4292642 (1981-09-01), Appels et al.
patent: 4707720 (1987-11-01), Shirai et al.
patent: 4949142 (1990-08-01), Contiero et al.
patent: 5113237 (1992-05-01), Stengl
patent: 5455439 (1995-10-01), Terashima et al.
patent: 5801418 (1998-09-01), Ranjan
patent: 5883413 (1999-03-01), Ludikhuize
patent: 5894156 (1999-04-01), Terashima et al.
patent: 5907182 (1999-05-01), Terashima
patent: 6078090 (2000-06-01), Williams et al.
patent: 6274919 (2001-08-01), Wada
patent: 6376891 (2002-04-01), Nagatani et al.
patent: 6489653 (2002-12-01), Watanabe et al.
patent: 6608350 (2003-08-01), Kinzer et al.
patent: 6798037 (2004-09-01), Leonardi
patent: 2002/0008299 (2002-01-01), Leonardi
patent: 2002/0100935 (2002-08-01), Inoue
patent: 2002/0102808 (2002-08-01), Pu et al.
patent: 2002/0113286 (2002-08-01), Shimizu
patent: 5-190693 (1993-07-01), None
patent: 9-283716 (1997-10-01), None
patent: 10-12607 (1998-01-01), None
patent: 10-0327977 (1998-10-01), None
patent: 10-0210213 (1999-04-01), None
Arena Andrew O
Crane Sara
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Semiconductor device with improved resurf features including... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with improved resurf features including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with improved resurf features including... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3811381