4. Active solid-state devices (e.g., transistors, solid-state diode
  5. With means to increase breakdown voltage threshold
  6. In integrated circuit
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Lateral conduction superjunction semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Lateral DMOS transistor having reduced surface field

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Lateral high-voltage devices with optimum variation lateral...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Lateral high-voltage semiconductor devices with surface...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Lateral super junction field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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LDMOS resurf high voltage transistor

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Patent

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Lightly-doped drain MOSFET with improved breakdown characteristi

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Patent

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