Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2001-12-26
2004-11-30
Tran, Minh Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S470000, C257S336000, C257S334000, C257S467000, C257S469000
Reexamination Certificate
active
06825543
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor device, a method for manufacturing the same, and a liquid jet apparatus, in particular, to a liquid jet apparatus applicable to a recording apparatus to be used as an output terminal of information equipment such as a copying machine, a facsimile, a word processor, a computer or the like, an apparatus to be used for manufacturing a deoxyribonucleic acid (DNA) chip, an organic transistor, a color filter or the like, and the like, a semiconductor device usable to the liquid jet apparatus suitably, and a method for manufacturing the same.
2. Related Background Art
A description is given to a liquid jet apparatus by illustrating a recording apparatus such as an ink jet printer.
A conventional recording apparatus installs an electro-thermal conversion element and a semiconductor for driving the same (hereinafter referred to as an “electro-thermal conversion element driving semiconductor device”) therein as the recording head thereof.
FIG. 38
is a sectional view showing the section structure of a part of a conventional ink jet recording head. A reference numeral
101
indicates a semiconductor substrate made of a single crystal silicon.
A reference numeral
102
designates an n-type well region; a reference numeral
108
designates a drain region; a reference numeral
115
designates an n-type field relaxation drain region; a reference numeral
107
designates an n-type source region; and a reference numeral
104
designates a gate electrode. These components constitute an electro-thermal conversion element driving semiconductor device
130
using a metal-insulator semiconductor (MIS) type field effect transistor.
Moreover, a reference numeral
117
designates a silicon oxide layer as a thermal storage layer and an insulator layer; a reference numeral
118
designates a tantalum nitride film as a heat resistor layer; a reference numeral
119
designates an aluminum alloy film as wiring; and a reference numeral
120
designates a silicon nitride film as a protective film. All of the components described above constitute a substrate
140
of the recording head.
Hereupon, a reference numeral
150
designates a portion being a heating portion, and a reference numeral
160
designates a portion where ink is jetted. Moreover, a top plate
170
forms a liquid path
180
in association with the substrate
140
.
Other electro-thermal conversion element driving semiconductor devices are disclosed in Japanese Patent Application Laid-Open Nos. 5-185594, 6-069497, 10-034898, and the like.
Now, although many improvements have been made in the aforesaid conventionally structured recording head and the aforesaid electro-thermal conversion element driving semiconductor device, recently the following properties of these products have further been required: being capable of being driven in high speed, using less energy, being highly integrated, being manufactured at low costs, and having high properties. In particular, the high density integration of switching devices has been insufficient in conventional head structures. Moreover, it has been easy to happen the rise of a substrate potential (latch up) caused by the lowness of the breakdown voltages of the conventional head structures can easily occur in operation.
Besides, the structures of electro-thermal conversion element driving semiconductor devices have been known which are disclosed in Japanese Patent Application Laid-Open Nos. 62-098764, 5-129597, 8-097410, 9-307110, and the like.
When insulated gate type transistors are used for driving electro-thermal conversion elements, in addition to the improvements of their breakdown voltages, the improvements of the following properties have become required more: being capable of being driven in high speed, using less energy, being highly integrated, being manufactured at low costs, and having high properties. In particular, the uniformity of properties of transistor devices has been insufficient when the transistor devices are integrated in a high density in conventional semiconductor device structures.
SUMMARY OF THE INVENTION
A first object of the present invention is to provide a semiconductor device, a method for manufacturing the same, and a liquid jet apparatus that can decrease the occupation areas of switching devices superior in break down resistances on chips to enable the further higher integration of electro-thermal conversion element driving semiconductor devices.
A second object of the present invention is to provide a semiconductor device, a method for manufacturing the same, and a liquid jet apparatus that have low possibilities of the occurrence of disadvantages owing to channeling and have transistors equal in characteristics and further are possible to realize the higher integration of semiconductor devices.
The aforesaid first object of the present invention is achieved by a semiconductor device comprising: a plurality of electro-thermal conversion elements; and a plurality of switching devices for flowing electric currents through the plural electro-thermal conversion elements, wherein: the electro-thermal conversion elements and the switching devices are integrated on a first conductive type semiconductor substrate; the switching devices are insulated gate type field effect transistors that severally include: a second conductive type first semiconductor region formed on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region, the second semiconductor region being formed to adjoin the first semiconductor region; a second conductive type source region formed on the surface side of the second semiconductor region; a second conductive type drain region formed on the surface side of the first semiconductor region; and gate electrodes formed on the channel region with a gate insulator film put between them; and the second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, the second semiconductor region being disposed between two of the drain regions arranged side by side so as to separate the drain regions in a traverse direction.
Here, it is preferable that the second semiconductor region is formed adjacently to the semiconductor substrate.
Moreover, the source region and the drain region are preferably disposed alternately in traverse directions.
The electro-thermal conversion elements are preferably connected with the drain region.
Two of the gate electrodes are preferably formed with the source region put between them.
An arrangement direction of the plural electro-thermal conversion elements and an arrangement direction of the plural switching devices are preferably in parallel.
The drain regions of at least two of the insulated gate type field effect transistors are preferably connected with one of the electro-thermal conversion elements, and the source regions of the plural insulated gate type field effect transistors are preferably commonly connected.
The effective channel lengths of the insulated gate type field effect transistors are preferably determined on a difference of transversal diffusion quantities between in the second semiconductor region and in the source region.
The insulated gate type field effect transistors severally preferably comprise a first conductive type diffusion layer for pulling out an electrode such that the diffusion layer penetrates the source region.
Drain sides of the gate electrodes are preferably formed on insulator films thicker than the gate insulator film.
Drain sides of the gate electrodes are preferably formed on field insulator films.
The first semiconductor region is preferably a well formed by introducing a reverse conductive type impurity from a surface of the semiconductor substrate.
The first semiconductor region is preferably composed of a plurality of wells formed by introducing a reverse conductive type impurity from a surface of the semiconductor substrate and by
Fujita Kei
Hayakawa Yukihiro
Shimotsusa Mineo
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Tran Minh Loan
Tran Tan
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