Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Patent
1993-03-31
1994-12-20
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
257493, 257632, 257335, H01L 2978, H01L 2991
Patent
active
053748433
ABSTRACT:
A high voltage integrated circuit (IC) has a passivation structure that shields the underlying circuit from the electrical effects of charge on the passivation structure. In one embodiment, the passivation structure comprises a silicon rich nitride layer in electrical contact with underlying circuit elements. The silicon rich nitride is highly resistive and permits only a negligible current between elements, but is conductive enough that charge on the surface of the passivation structure flows into the IC before the electric fields in the underlying circuit elements is significantly changed. In another embodiment, the passivation structure has two or more layers with a less conductive layer in contact with the underlying IC and overlying conductive layer which shields the IC from the effects of charge build up.
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Chang Mike
Chuang Juiping
Cornell Michael E.
Grasso David
Williams Richard K.
Fahmy Wael M.
Hille Rolf
Silinconix, Inc.
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