Lateral super junction field effect transistor

Details Lateral super junction field effect transistor Lateral super junction field effect transistor

2007-04-17

2007-04-17

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S493000, C257S343000, C257S141000, C257S122000

Reexamination Certificate

active

10859564

ABSTRACT:
A voltage booster transistor with an optimal conducting path formed in widebandgap semiconductors like Silicon Carbide and Diamond, is provided as a power transistor with a voltage rating >200V. Contrary to conventional vertical design of power transistors, a higher, optimum doping for a given thickness supports higher Source/Drain blocking voltage. A topside and backside gate region of the opposite conductivity type than the channel region providing control of source to drain current path through a small gate voltage. The backside gate and the Drain junction are able to support the rated blocking voltage of the device.

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