LDMOS resurf high voltage transistor

Details LDMOS resurf high voltage transistor LDMOS resurf high voltage transistor

1996-12-16

1997-11-11

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257493, 257343, 257347, H01L 2358, H01L 2976

Patent

active

056867557

ABSTRACT:
A high voltage transistor includes a semiconductor-on-insulator (SOI) region in which a source and a channel are formed. A drain drift region is further formed partly in the SOI region and partly in the bulk silicon region beyond SOI and a gate is coupled to said SOI channel.

REFERENCES:
patent: 4866495 (1989-09-01), Kinzer
patent: 5113236 (1992-05-01), Arnold et al.
High Voltage Silicon-on-Insulator (SOI) MOSFETs', proceedings of the 3rd International Symposium on Power Semiconductor Devices, ISPSD '91 Baltimore, Maryland, Apr. 22-24, Qin Lu, et al.
High Voltage DMOS Power FETs on Thin SOI Substrates 1990 IEEE SOS/SOI Technology Conference, Oct. 22-4 1990, J.M. O'Connor, et al.
J.A. Appels and H.M.J. Vaes, "High Voltage Thin Layer Devices (Resurf Devices)," IEDM Tech. Digest, pp. 238-241, 1979.

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