Semiconductor device exploiting a quantum interference effect
Semiconductor device for switching a ballistic flow of carriers
Semiconductor device for varying the mobility of electrons by li
Semiconductor device formed in a recrystallized layer
Semiconductor device formed on a substrate having an off-angle s
Semiconductor device having a channel for a zero-or one-dimensio
Semiconductor device having a GESC layer between silicon layers
Semiconductor device having a high current gain and a higher Ge
Semiconductor device having a solid-state image sensor
Semiconductor device having a superlattice structure
Semiconductor device having a vertical quantum well via and meth
Semiconductor device having an active layer with regions with di
Semiconductor device having contact resistance reducing layer
Semiconductor device having heterojunction type MIS...
Semiconductor device having shallow quantum well region
Semiconductor device having superlattice semiconductor layer...
Semiconductor device including a metal-to-semiconductor...
Semiconductor device including a strained superlattice and...
Semiconductor device including a strained superlattice layer...
Semiconductor device including a superlattice and adjacent...